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INTEGRATED CIRCUITS
74F670 4 x 4 register file (3-State)
Product specification IC15 Data Handbook 1990 Jul 12
Philips Semiconductors
Philips Semiconductors
Product specification
4 x 4 register file (3-State)
74F670
FEATURES
* Simultaneous and Independent Read and Write operations * Expandable to almost any word size and bit length * 3-State outputs
DESCRIPTION
The 74F670 is a 16-bit 3-State Register File organized as 4 words of 4 bits each. Separate Read and Write Address and Enable inputs are available, permitting simultaneous writing into one word location and reading from another location. The 4-bit word to be stored is presented to four data inputs. The Write address inputs (WA and WB) determine the location of the stored word. The Write Address inputs should only be changed when the Write Enable input (WE) is High for conventional operation. When the WE is Low, the data is entered into the addressed location. The addressed location remains transparent to the data while the WE is Low. Data supplied at the inputs will be read out in true (non-inverting) form from the 3-State outputs. Data and address inputs are inhibited when the WE is High. Direct acquisition of data stored in any of the four registers is made possible by individual Read Address inputs (RA, RB). The addressed word appears at the four outputs when the Read Enable (RE) is Low. Data outputs are in the high impedance "off" state when the RE is High. This permits outputs to be tied together to increase the word capacity to very large numbers. Up to 128 devices can be stacked to increase the word size to 512 locations by tying the 3-State outputs together. Since the limiting factor for expansion is the output High current, further stacking is possible by tying pullup reisistors to the outputs to increase the IOH current available. Design of the Read Enable signals for the stacked devices must ensure that there is no overlap in the Low levels which cause more than one output to be active at the same time. Parallel expansion to generate n-bit words is accomplished by driving the Enable and address inputs of each device in parallel.
PIN CONFIGURATION
D1 D2 D3 RB RA Q3 Q2 GND 1 2 3 4 5 6 7 8 16 VCC 15 D0 14 WA 13 WB 12 WE 11 RE 10 Q0 9 Q1
SF01178
TYPE 74F670
TYPICAL PROPAGATION DELAY 6.5ns
TYPICAL SUPPLY CURRENT (TOTAL) 50mA
ORDERING INFORMATION
DESCRIPTION 16-pin plastic DIP 16-pin plastic SOL COMMERCIAL RANGE VCC = 5V 10%, Tamb = 0C to +70C N74F670N N74F670D PKG DWG # SOT38-4 SOT162-1
INPUT AND OUTPUT LOADING AND FAN-OUT TABLE
PINS D0 - D3 WA, WB RA, RB WE RE Q0-Q3 DESCRIPTION Data inputs Write address inputs Read address inputs Write Enable inputs Read Enable inputs Data output 74F(U.L.) HIGH/LOW 1.0/1.0 1.0/1.0 1.0/1.0 1.0/1.0 1.0/1.0 150/40 LOAD VALUE HIGH/LOW 20A/0.6mA 20A/0.6mA 20A/0.6mA 20mA/0.6mA 20mA/0.6mA 3.0mA/24mA
NOTE: One (1.0) FAST Unit Load is defined as: 20A in the High state and 0.6mA in the Low state.
1990 Jul 12
2
853-0014 99965
Philips Semiconductors
Product specification
4 x 4 register file (3-State)
74F670
LOGIC SYMBOL
14 13 5 4 15 1 2 3
LOGIC SYMBOL (IEEE/IEC)
14 0 13 WA WB RA RB D0 D1 D2 D3 5 0 4 12 Q0 Q1 Q2 Q3 11 2A 1 0 3 1A 1 RAM 4X4 0 3
12 11
WE RE
C4 [WRITE] EN [READ] 10 2A 9 7 6
10 VCC=Pin 16 GND=Pin 8
9
7
6
15 1 2 3
1A, 4D
SF01179
SF01180
WORD SELECT FUNCTION TABLE
WRITE MODE WB L L H WA L H L READ MODE RB L L H RA L H L H OPERATING MODE Word Selected Word 0 Word 1 Word 2 Word 3
WRITE MODE FUNCTION TABLE
INPUTS WE L L Dn L H INTERNAL LATCHES* L H OPERATING MODE
Write data
H H H H = High voltage level L = Low voltage level
READ MODE FUNCTION TABLE
INPUT RE L L H L X Z * = = = = = INTERNAL LATCHES* L H OUTPUT OPERATING MODE Qn L H Read
H X NC Data latched H = High voltage level L = Low voltage level NC= No change X = Don't care * = The write address (WA and WB) to the "internal latches" must be stabled while WE is Low for conventional operation.
H X Z Disabled High voltage level Low voltage level Don't care High impedance "off" state The selection of "internal latches" by Read Address (RA and RB) are not constrained by WE or RE operation.
1990 Jul 12
3
Philips Semiconductors
Product specification
4 x 4 register file (3-State)
74F670
LOGIC DIAGRAM
RE
11
RA 5 RB 4 12
WE
WB 13 WA 14
Q E D D3 3 E
Q E D
Q E D
Q D
6
Q3
Q E D D2 2 E
Q E D
Q E D
Q D
7
Q2
Q E D D1 1 E
Q E D
Q E D
Q D
9
Q1
Q E D D0 15 E
Q E D
Q E D
Q D
10
Q0
VCC=Pin 16 GND=Pin 8
SF01181
1990 Jul 12
4
Philips Semiconductors
Product specification
4 x 4 register file (3-State)
74F670
ABSOLUTE MAXIMUM RATINGS
(Operation beyond the limits set forth in this table may impair the useful life of the device. Unless otherwise noted these limits are over the operating free-air temperature range.) SYMBOL VCC VIN IIN VOUT IOUT Tamb Tstg Supply voltage Input voltage Input current Voltage applied to output in High output state Current applied to output in Low output state Operating free-air temperature range Storage temperature PARAMETER RATING -0.5 to +7.0 -0.5 to +7.0 -30 to +5 -0.5 to VCC 48 0 to +70 -65 to +150 UNIT V V mA V mA C C
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC VIH VIL IIK IOH IOL Tamb Supply voltage High-level input voltage Low-level input voltage Input clamp current High-level output current Low-level output current Operating free-air temperature range 0 PARAMETER LIMITS MIN 4.5 2.0 0.8 -18 -3 24 70 NOM 5.0 MAX 5.5 UNIT V V V mA mA mA C
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.) LIMITS SYMBOL PARAMETER TEST CONDITIONSNO TAG VCC = MIN, VIL = MAX VIH = MIN, IOH = MAX VCC = MIN, VIL = MAX VIH = MIN, IOL = MAX VCC = MIN, II = IIK VCC = MAX, VI = 7.0V VCC = MAX, VI = 2.7V VCC = MAX, VI = 0.5V VCC = MAX, VO = 2.7V VCC = MAX, VO = 0.5V VCC = MAX ICCH ICC Supply current (total) ICCL ICCZ VCC = MAX -60 50 50 55 10%VCC 5%VCC 10%VCC 5%VCC MIN 2.4 2.7 3.4 0.35 0.35 -0.73 0.50 0.50 -1.2 100 20 -0.6 50 -50 -150 70 70 80 V V A A mA A A mA mA mA mA V TYP
NO TAG
MAX
UNIT
VO OH
High-level High level output voltage
VO OL VIK II IIH IIL IOZH IOZL IOS
Low level output voltage Low-level Input clamp voltage Input current at maximum input voltage High-level input current Low-level input current Off state output current, High-level voltage applied Off state output current, Low-level voltage applied Short-circuit output currentNO TAG
NOTES: 1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type. 2. All typical values are at VCC = 5V, Tamb = 25C. 3. Not more than one output should be shorted at a time. For testing IOS, the use of high-speed test apparatus and/or sample-and-hold techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
1990 Jul 12
5
Philips Semiconductors
Product specification
4 x 4 register file (3-State)
74F670
of a High output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any sequence of parameter tests, IOS tests should be performed last.
AC ELECTRICAL CHARACTERISTICS
LIMITS SYMBOL PARAMETER TEST CONDITION MIN tPLH tPHL tPLH tPHL tPLH tPHL tPZH tPZL tPHZ tPLZ Propagation delay RA, RB to Qn Propagation delay WE to Qn Propagation delay Dn to Qn RE Enable time Qn to High or Low level RE Disable time Qn to High or Low level Waveform 3, 4 Waveform 1, 2 Waveform 1, 2 Waveform 5 Waveform 6 Waveform 5 Waveform 6 3.5 4.0 5.0 6.5 3.5 6.0 3.0 4.5 2.0 3.0 Tamb= +25C VCC = +5 0V +5.0V CL = 50pF, RL = 500 TYP 5.5 5.5 7.0 8.5 6.0 8.0 7.0 6.5 3.0 5.0 MAX 9.0 8.5 10.0 11.5 8.5 11.0 12.0 9.0 6.5 8.5 Tamb = 0C to +70C VCC = +5.0V 10% +5 0V CL = 50pF, RL = 500 MIN 3.0 3.5 4.5 6.0 3.0 5.5 2.5 4.0 1.5 3.0 MAX 10.0 9.9 11.0 12.5 9.5 12.5 13.0 10.0 7.5 8.5 ns ns ns ns ns ns ns ns ns ns UNIT
AC SETUP REQUIREMENTS
LIMITS SYMBOL PARAMETER TEST CONDITION Tamb = +25C VCC = +5.0V CL = 50pF, RL = 500 MIN ts(H) ts(L) th(H) th(L) ts(H) ts(L) th(H) th(L) tw(L) Setup time, High or Low Dn to positive going WE Hold time, High or Low Dn to positive going WE Setup time, High or Low WA, WB to negative going WE1 Hold time, High or Low WA, WB to negative going WE1 WE Pulse width, Low Waveform 3, 4 Waveform 3, 4 Waveform 3, 4 Waveform 3, 4 Waveform 3, 4 1.5 6.0 0 1.0 0 0 0 0 6.5 TYP MAX Tamb = 0C to +70C VCC = +5.0V 10% CL = 50pF, RL = 500 MIN 1.5 7.0 0 1.0 0 0 0 0 8.5 MAX ns ns ns ns ns ns ns ns ns UNIT
NOTES: 1. Write Address (WA, WB) setup time will protect the data written into the previous address. If protection of data in the previous address is not required, setup time for Write Address to WE can be ignored. Any address selection sustained for the final 7ns of the WE pulse during hold time for Write Address to WE will result in data being written into that location.
1990 Jul 12
6
Philips Semiconductors
Product specification
4 x 4 register file (3-State)
74F670
AC WAVEFORMS
For all waveforms, VM=1.5V. The shaded areas indicate when the input is permitted to change for predictable output performance.
Dn
VM
Dn
VM
WE tPLH
VM tPHL
WE tPHL
VM tPLH
Qn
VM
VM
Qn
VM
VM
SF01182
SF01183
Waveform 1. Propagation Delay, Write Enable and Data to Outptus
Waveform 2. Propagation Delay, Write Enable and Data to Outputs
WA, WB
VM ts
VM th
RA, RB
VM tPHL
VM
VM tPLH
Dn
VM ts tw(L)
VM th
Qn tPLH
VM tPHL
VM
WE
VM
VM
Qn
VM
VM
SF01184
SF01185
Waveform 3. Setup and Hold Times for Write Address to Write Enable and Data to Write Enable
Waveform 4. Propagation Delays for Read Address to Output
RE RE VM tPZH Qn VM 0V VM tPHZ VOH -0.3V Qn
VM tPZL VM
VM tPLZ
VOL +0.3V
SF01186
SF01187
Waveform 5. 3-State Output Enable Time to High Level and Output Disable Time from High Level
Waveform 6. 3-State Output Enable Time to Low Level and Output Disable Time from Low Level
1990 Jul 12
7
Philips Semiconductors
Product specification
4 x 4 register file (3-State)
74F670
TEST CIRCUIT AND WAVEFORM
VCC 7.0V VIN PULSE GENERATOR RT D.U.T. VOUT RL NEGATIVE PULSE 90% VM 10% tTHL (tf ) CL RL tTLH (tr ) 90% POSITIVE PULSE 10% tTHL (tf ) AMP (V) 90% VM tw 10% 0V tw VM 10% tTLH (tr ) 0V AMP (V)
90%
Test Circuit for 3-State Outputs SWITCH POSITION TEST tPLZ tPZL All other SWITCH closed closed open
VM
Input Pulse Definition
DEFINITIONS: RL = Load resistor; see AC electrical characteristics for value. CL = Load capacitance includes jig and probe capacitance; see AC electrical characteristics for value. RT = Termination resistance should be equal to ZOUT of pulse generators.
INPUT PULSE REQUIREMENTS family amplitude VM 74F 3.0V 1.5V rep. rate 1MHz tw 500ns tTLH 2.5ns tTHL 2.5ns
SF00777
1990 Jul 12
8
Philips Semiconductors
Product specification
Register file
74F670
DIP16: plastic dual in-line package; 16 leads (300 mil)
SOT38-4
1990 Jul 12
9
Philips Semiconductors
Product specification
Register file
74F670
SO16: plastic small outline package; 16 leads; body width 7.5 mm
SOT162-1
1990 Jul 12
10
Philips Semiconductors
Product specification
Register file
74F670
NOTES
1990 Jul 12
11
Philips Semiconductors
Product specification
Register file
74F670
Data sheet status
Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Production
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 1998 All rights reserved. Printed in U.S.A. print code Document order number: Date of release: 10-98 9397-750-05172
Philips Semiconductors
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